Fitipower Integrated Technology Expands to Malaysia: Establishes Key Semiconductor R&D Hub in Selangor's Puchong

Taiwan-based Fitipower Integrated Technology Inc. has officially established its presence in Malaysia with the launch of Fitipower Malaysia Sdn. Bhd..

The new subsidiary will focus on semiconductor IC design-related research and development, particularly in Display Driver IC (DDIC), Power Management IC (PMIC), and Edge AI SoC technologies.

Strategic Launch at Malaysia's Premier IC Design Park

Operations have commenced at the Malaysia Semiconductor IC Design Park in Puchong, spearheaded by the Selangor Information Technology & Digital Economy Corporation (Sidec).

Fitipower Chairman Young Lin emphasized Malaysia's robust engineering talent pool, burgeoning semiconductor ecosystem, and government support as ideal for overseas R&D expansion.

Boosting Malaysia's Semiconductor Ambitions

This development reinforces the momentum of the Malaysia Semiconductor IC Design Park, aiming to position Selangor as a regional hub for IC design and innovation.

The park serves as a platform to attract global IC design firms, nurture local talent, and propel Malaysia toward higher-value semiconductor activities.

Following the launch ceremony, Sidec held discussions with Selangor State Executive Council Member Ng Sze Han and Fitipower executives on future collaborations in talent development and technology initiatives.

Historically, Fitipower has been a key player in Taiwan's IC design sector, and this move marks a significant step in its global diversification strategy.

The expansion leverages regional resources to accelerate product innovation, broaden market reach, and deliver sustained value to customers and shareholders.

Looking ahead, this partnership signals strengthening economic ties between Taiwan and Malaysia amid rising demand for advanced semiconductors.

Malaysia's growing role in the global supply chain could see further influxes of high-tech investments, fostering job creation and technological advancement.