Samsung to unveil 400-layer bonding vertical NAND by 2026 for AI servers

Quick Summary:

According to the South Korean tech giant’s memory chip development roadmap obtained by The Korea Economic Daily, its Device Solutions (DS) division, which oversees its semiconductor business, aims to produce vertical NAND with at least 400 layers of cells vertically stacked to maximize capacity and performance as early as 2026.

Samsung Electronics Co., the world’s largest memory chipmaker, plans to unveil a 400-layer vertical NAND flash chip by 2026 to lead the fast-growing storage device market amid the artificial intelligence boom.

In 2013, Samsung pioneered V NAND chips by launching vertically stacked storage cells – the first to do in the industry – to maximize capacity.

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Article Details

Category: Economy

Markets: South Korea

Topics: Nand Samsung Market Cells Plans According Chips Flash Storage Dram Memory

Source Website Secure: Yes (HTTPS)

News Sentiment: Neutral

Fact Checked: Legitimate

Article Type: News Report

Published On: 2024-10-28 @ 18:13:03 (2 hours ago)

News Timezone: GMT +8:00

News Source URL: kedglobal.com

Language: English

Article Length: 654 words

Reading Time: 4 minutes read

Sentences: 33 lines

Sentence Length: 20 words per sentence (average)

Platforms: Desktop Web, Mobile Web, iOS App, Android App

Copyright Owner: © Korea Economic Daily

News ID: 23282900

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About Korea Economic Daily

Main Topics: Economy

Official Website: kedglobal.com

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Year Established: 1964

Headquarters: South Korea

News Last Updated: ago

Coverage Areas: South Korea

Ownership: Independent Company

Publication Timezone: GMT +8:00

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News Language: English

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Website Security: Secure (HTTPS)

Publisher ID: #91

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