Transforming products from cloud to edgeServing as the foundation for future products, the 1γ node will be integrated across the Micron memory portfolio: Data center — 1γ-based DDR5 memory solutions for the data center, which enable up to 15% faster performance, deliver increased energy efficiency and help enable continued server performance scaling allowing data centers to optimize within future rack-level power and thermal design. Edge AI — 1γ low-power DRAM solutions offer improved power savings and increased bandwidth, enhancing the user experience with Edge AI solutions. AI PCs — 1γ DDR5 SODIMMs increase performance and reduce power usage by 20%,4 extending battery life and improving the overall notebook user experience. Mobile — 1γ LPDDR5X will enable exceptional AI experiences at the edge and continues Micron’s leadership in mobile technology.
Micron’s transition to the 1γ DRAM node helps address the key challenges customers are looking to resolve: Enhanced performance — Micron 1γ-based DRAM provides improved performance that will support the scaling of compute across a variety of memory offerings from data centers to edge devices to meet the demands of future AI workload requirements. Power savings — Micron’s 1γ node, using next-generation high-K metal gate CMOS technology paired with design optimizations, enables greater than 20% lower power, which leads to improved thermal profiles.
Micron delivers superior performance and power efficiency to data center, client and mobile platforms with the industry’s first high performance 1γ nodeBOISE, Idaho, Feb.25, 2025 (GLOBE NEWSWIRE) -- Micron Technology, Inc.(Nasdaq: MU), today announced it is the first in the industry to ship samples of its 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs to ecosystem partners and select customers.
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